Silicon based conductive material and process for production thereof
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United States of America Patent
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Jan 14, 2003
Grant Date -
N/A
app pub date -
Jun 8, 2000
filing date -
Oct 24, 1997
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Expired
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Abstract
A silicon based conductive material based on a semiconductor silicon and having an electric resistivity of 10.sup.-3 (.OMEGA..multidot.m) or less at ambient temperature which has been unattainable heretofore, while facilitating production and handling. An electric resistivity of 10.sup.-6 (.OMEGA..multidot.m) or less, which is common for conductors can be realized by adding relatively large quantities of various kinds of elements to silicon. The conductive material can be provided in a semiconductor silicon substrate in a desired pattern by ion beam implantation and patterning. It can be employed not only in the form of a substrate, a rod or a wire, but also in the form of fine particles dispersed in a resin or glass to be employed in various applications requiring conduction, including a conductive sheet material.
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