Method and apparatus for achieving uniform low dark current with CMOS photodiodes
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United States of America Patent
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Dec 24, 2002
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N/A
app pub date -
Dec 21, 1999
filing date -
Dec 21, 1999
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Expired
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Abstract
An apparatus and method for achieving uniform low dark currents with CMOS photodiodes. A threshold voltage of a reset FET is set to an appropriate value such that the dark current from a photodiode is actively removed through the reset FET during signal integration. This reduces the dark current by over 3 orders of magnitude as compared to conventional active pixel sensors, without requiring pinned photodiodes.
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