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Abstract

A method is provided for fabricating a semiconductor device having a gate-all-around architecture. A substrate is produced so as to include an active central region with an active main surface surrounded by an insulating peripheral region with an insulating main surface. The active main surface and the insulating main surface are coextensive and constitute a main surface of the substrate. A fist layer of Ge or an SiGe alloy is formed on the active main surface, and a silicon layer is formed on the first layer and on the insulating main surface. The silicon layer and the first layer are masked and etched in order to form a stack on the active main surface, and the first layer is removed so that the silicon layer of the stack forms a bridge structure over the active main surface. The bridge structure defines a tunnel with a corresponding part of the active main surface. A thin layer of a dielectric material that does not fill the tunnel is formed on the external and internal surfaces of the bridge structure and on the side walls. A conducting material is deposited so as to cover the bridge structure and fill the tunnel, and the conducting material is masked and etched in order to form a gate-all-around region for the semiconductor device. Also provided is a semiconductor device having a gate-all-around architecture.

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First Claim