Method for manufacturing semiconductor substrate having an epitaxial film in the trench
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United States of America Patent
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Dec 17, 2002
Grant Date -
N/A
app pub date -
Oct 27, 2000
filing date -
Oct 28, 1999
priority date (Note) -
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Abstract
A trench is formed in a silicon substrate, and an epitaxial film is formed on the substrate and in the trench. After a part of the epitaxial film formed around an opening portion of the trench is etched, another epitaxial film is formed on the substrate and in the trench. Accordingly, the trench can be filled with the epitaxial films completely. Then, the surface of the substrate is flattened.
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