Method for controlling dopant profiles and dopant activation by electron beam processing
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United States of America Patent
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Dec 3, 2002
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N/A
app pub date -
Jun 8, 2000
filing date -
Jun 11, 1999
priority date (Note) -
Expired
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Abstract
An improved dopant application system and method for the manufacture of microelectronic devices accurately places dopant on and within a dielectric or semiconductor surface. Diffusing and activating p-type and n-type dopants in dielectric or semiconductor substrates is achieved by means of electron beam irradiation.
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