Spinel ferrite thin film and method of manufacturing the same
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United States of America Patent
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Dec 3, 2002
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N/A
app pub date -
Aug 31, 2000
filing date -
Feb 14, 2000
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Abstract
A substrate and a target are disposed within a vacuum chamber, and an oxygen partial pressure within the vacuum chamber is set to 1.times.10.sup.-5 or less. Under this condition, a spinel ferrite thin film selected from the group consisting of compounds represented by the formula AE.sub.1+t Fe.sub.2-2t TM.sub.t O.sub.4, where AE represents an alkaline earth metal or an alkali metal, TM represents a transition metal and t falls within a range of between 0.2 and 0.6, and compounds represented by the formula Zn.sub.1-x Co.sub.x Fe.sub.2 O.sub.4, where x falls within a range of between 0.2 and 0.7, is deposited on the substrate by laser beam deposition. The particular method makes it possible to provide a spinel ferrite thin film realizing a spin glass state under temperatures around or higher than room temperature and capable of controlling the spin state by light.
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