Method of reading two-bit memories of NROM cell
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United States of America Patent
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Nov 26, 2002
Grant Date -
Aug 29, 2002
app pub date -
Feb 28, 2001
filing date -
Feb 28, 2001
priority date (Note) -
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Abstract
A method of reading two-bit information in Nitride Read only memory (NROM) cell simultaneously. According to outputted voltage in drain or source of the NROM, it can identify a logical two-bit combination massage of the NROM. The method includes: grounding the source of the NROM; inputting a voltage to the drain of the NROM; inputting a voltage to the gate of the NROM; measuring the outputted current of drain or source; and dividing the outputted current into four different zones, and each zone represents a specific logical two-bit information, which is '0 and 0', '0 and 1', '1 and 0', or '1 and 1'.
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