Method for manufacturing magnetoresistance element
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United States of America Patent
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Nov 19, 2002
Grant Date -
N/A
app pub date -
Dec 18, 2000
filing date -
Mar 28, 1997
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Expired
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Abstract
A method of manufacturing a magnetoresistance element which can reproduce magnetic signals with higher sensitivity. The manufacturing method includes the steps of providing a vacuum below 10.sup.-9 Torr in a film forming chamber for forming a nonmagnetic layer and ferromagnetic layer; performing plasma-etching of the surface of a substrate body by using a mixture of a gas (a) containing at least oxygen or water introduced into the chamber and an Ar gas (b) introduced into the chamber in a vacuum, state controlled to higher than 10.sup.-9 Torr; and forming the nonmagnetic and ferromagnetic layers on the etched substrate body by sputtering a prescribed target by using the mixture of the gases (a) and (b).
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