Semiconductor catalytic layer and atomic layer deposition thereof
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 12, 2002
Grant Date -
N/A
app pub date -
Jun 29, 2000
filing date -
Jun 29, 2000
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor and manufacturing method is provided for device interconnects with a catalytic layer of copper, palladium, nickel, cobalt, silver, or other catalytic material deposited in a atomic layer by atomic layer epitaxy on a barrier layer of tantalum, titanium, tungsten, their nitrides, or a compound thereof between the barrier layer and an electroless seed layer on which conductive channel and via material is deposited.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully