Slurry for chemical mechanical polishing
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United States of America Patent
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Nov 12, 2002
Grant Date -
Aug 8, 2002
app pub date -
Nov 20, 2001
filing date -
Nov 24, 2000
priority date (Note) -
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Abstract
By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.
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