Deposition of a siloxane containing polymer
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United States of America Patent
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Nov 5, 2002
Grant Date -
N/A
app pub date -
Jul 6, 2000
filing date -
Jan 23, 1998
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Abstract
An insulating layer is formed onto a surface of a semiconductor substrate by reacting a silicon-containing compound and a compound containing peroxide bonding to deposit a short-chain polymer on the surface of the semiconductor substrate. A deposition rate of the short-chain polymer is increased by farther reacting a substance which associates readily with the compound containing the peroxide bonding.
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