PROCESS FOR PRODUCING BISMUTH TERTIARY AMYLOXIDE
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United States of America Patent
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Oct 29, 2002
Grant Date -
Nov 14, 2002
app pub date -
Feb 20, 2002
filing date -
Mar 5, 2001
priority date (Note) -
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Abstract
This invention provides a process for producing bismuth tertiary amyloxide which is a starting material for forming a ferroelectric film such as SrBi.sub.2Ta.sub.2O.sub.9 containing bismuth oxide, or an oxide superconductive film such as Bi.sub.2Sr.sub.2CaCu.sub.2O.sub.8, by the CVD method or sol-gel method. This process comprises reacting bismuth bromide with sodium tertiary amyloxide or potassium tertiary amyloxide in a toluene solvent containing 5 to 30 weight % tetrahydrofuran, then separating a byproduct sodium bromide or potassiumbromide by filtration and recovering bismuth tertiary amyloxide by distillation under reduced pressure.
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