Method of forming a contact plug for a semiconductor device
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United States of America Patent
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Oct 29, 2002
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N/A
app pub date -
Dec 28, 2001
filing date -
Oct 8, 2001
priority date (Note) -
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Abstract
A method of manufacturing a semiconductor device having the steps of forming an insulating layer on a silicon substrate, forming a contact hole on the insulating layer, forming a selective silicon layer in the contact hole, and forming a selective conductive plug on the selective silicon layer.
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