Inductively-coupled-plasma ionized physical-vapor deposition apparatus, method and system
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United States of America Patent
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Oct 29, 2002
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N/A
app pub date -
Oct 3, 2000
filing date -
Oct 3, 2000
priority date (Note) -
Expired
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Abstract
A system and related method are disclosed for performing an inductively-coupled-plasma ionized physical-vapor deposition ('PVD') process for depositing material layers onto a substrate. Within a PVD process chamber are contained a target/cathode assembly, a chuck assembly, a process medium, a variable height inductively-coupled ('VHIC') ionization coil segment and an antenna actuator for controlling the relative vertical position of the variable height inductively-coupled ionization coil segment. The VHIC coil segment can be contained within a dielectric liner and can be covered by a multi-slotted grounded electrostatic shield. The VHIC ionization coil segment can comprise one or more zones comprised of one or more coil loops powered by one or more radio-frequency power supplies. Each zone can be powered through an adjustable passive electrical component for providing multiple inductive zone operations during a deposition process.
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