Liquid double alkoxide of niobium or tantalum and alkaline earth metal, production method thereof, and production method of complex metal oxide dielectric using it
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United States of America Patent
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Oct 22, 2002
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N/A
app pub date -
Feb 17, 2000
filing date -
May 28, 1999
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Abstract
A novel compound shown by M[N(OC.sub.2 H.sub.5).sub.5 (OC.sub.2 H.sub.4 OCH.sub.3)].sub.2, wherein M represents Sr or Ba, N represents Nb or Ta, which is a liquid at room temperature, is hard to be thermally dissociated, and has a vapor pressure of about 0.2 Torr at 190.degree. C. The compound is produced by reacting 2 moles of N(OC.sub.2 H.sub.5).sub.5 and from 1 to 1.1 moles of M(OC.sub.2 H.sub.4 OCH.sub.3).sub.2 and then recovering the product by distillation. By using the compounds as raw materials for a CVD method, an SrBi.sub.2 Ta.sub.2 O.sub.9 thin film or a (Sr.sub.0.75 Ba.sub.0.25)Nb.sub.2 O.sub.6 thin film for semiconductor devices can be produced.
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