Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
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United States of America Patent
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Oct 22, 2002
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app pub date -
Sep 27, 2000
filing date -
Sep 28, 1999
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Abstract
A GaN single crystal is grown by synthesizing GaN in vapor phase, piling a GaN crystal on a substrate, producing a three-dimensional facet structure including facets in the GaN crystal without making a flat surface, maintaining the facet structure without burying the facet structure, and reducing dislocations in the growing GaN crystal. The facet structure reduces the EPD down to less than 10.sup.6 cm.sup.-2.
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