MI element made of thin film magnetic material
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United States of America Patent
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Oct 15, 2002
Grant Date -
N/A
app pub date -
Mar 29, 2000
filing date -
Mar 30, 1999
priority date (Note) -
Expired
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Abstract
Here is disclosed a MI element made of thin film magnetic material utilizing a magnetic impedance effect comprising a substrate, first and second magnetic materials successively laminated on a surface of the substrate each in the form of thin film wherein the first magnetic material has its axis of easy magnetization Jm.sub.1 declined at an angle of .alpha..degree. and the second magnetic material has its axis of easy magnetization Jm.sub.2 declined at an angle of -.alpha..degree. with respect to a reference line Oo which is a direction corresponding to a path of high frequency current Iac so that the axes of easy magnetization of the first and second magnetic materials may intersect each other. Such MI element made of thin film magnetic material obtains linear magnetic field sensor characteristics exhibiting a remarkably large variation of impedance in response to a relatively low external magnetic field without any demand for bias magnetic field.
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