Semiconductor crystal growth apparatus
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United States of America Patent
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Oct 15, 2002
Issued Date -
N/A
app pub date -
Mar 1, 1995
filing date -
Jul 26, 1984
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A substrate is heated in a crystal growth vessel evacuated to a ultrahigh vacuum, and gases containing component elements of a crystal to be grown on the substrate are introduced into the vessel under predetermined conditions to cause successive epitaxial growth of single molecular layers, the number of growth cycles being automatically controlled. A mass analyzer is disposed opposite to the substrate in the vessel so that the progress of crystal growth can be incessantly traced and evaluated for each of the molecular layers. An etchant gas introduction nozzle extends into the vessel to make etching treatment of the surface of the substrate in the evacuated vessel prior to the crystal growth.
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