Nonvolatile semiconductor memory and automatic erasing/writing method thereof

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United States of America Patent

PATENT NO 6459640
APP PUB NO 20020101764A1
SERIAL NO

09931243

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Abstract

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A nonvolatile semiconductor memory includes a memory block composed of a memory array having a plurality of memory cells arranged in a matrix form, each of the memory cells being composed of a nonvolatile transistor; a memory decoder necessary for erasing/writing/reading data of the nonvolatile transistor in the memory array; a charge pump necessary for erasing/writing/reading the data of the nonvolatile transistor in the memory array; a register having each of a plurality of control signals for controlling the memory decoder and the charge pump allocated to register 1 bit; and an updating device for updating a content of the register by a data processor coupled to the register. By using this updating device to update the content of the register, the memory decoder and the charge pump are controlled, the data of the memory block is erased, and data is written in/read from the nonvolatile transistor. Thus a selecting device other than a laser can be applied for suppressing the increase of an LSI circuit size in the same chip as that for a dedicated control circuit, verifying the disconnected state of a FUSE circuit in the memory, and trimming the FUSE circuit.

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Patent Owner(s)

Patent OwnerAddress
RENESAS SYSTEM DESIGN CO LTD5-20-1 JOSUIHON-CHO KODAIRA TOKYO 187-8588

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hongo, Katsunobu Tokyo, JP 25 365
Iba, Tomohisa Tokyo, JP 6 119
Kamiya, Mikio Tokyo, JP 2 25
Kimura, Hiroyuki Tokyo, JP 355 4348
Sezaki, Toshihiro Tokyo, JP 5 71
Tanaka, Tsutomu Tokyo, JP 399 11273
Tani, Kunio Tokyo, JP 17 202
Tashiro, Tetsu Tokyo, JP 8 136

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