Bucket brigade TDI photodiode sensor
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United States of America Patent
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Oct 1, 2002
Grant Date -
N/A
app pub date -
Sep 15, 1999
filing date -
Sep 15, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A TDI sensor includes a bias charge voltage circuit, a reset voltage circuit, a bucket brigade column having a plurality of nodes, and a plurality of pinned photodiodes. Each photodiode is formed integral with a corresponding node of the bucket brigade column. The bucket brigade column is coupled between the bias charge voltage circuit at an initial node and the reset voltage circuit at a final node. The bucket brigade column includes a plurality of first phase clock conductors, and a plurality of second phase clock conductors, and the first and second phase clock conductors are interdigitated and formed of poly-crystalline silicon. The TDI sensor is formed in a substrate of a first conductivity type, and a cathode of each pinned photodiode is formed of a second conductivity type, and each pinned photodiode includes a pinning layer of the first conductivity type.
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