Importance

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Abstract

By forming a silicon single-crystal thin film direct on a chemically etched substrate, a time required for all the process can be effectively shortened, which largely contributes to reduction in production cost of a silicon epitaxial wafer and improvement on production efficiency thereof, with the result that a reduced wafer price at a user's end and a short delivery time are ensured. In a technical aspect, an etching removal in a chemical etching treatment is set to be 60 .mu.m or more and thereby, a glossiness of a front main surface of a chemically etched substrate can be ensured to be 95% or higher. With such a glossiness of the front main surface of the substrate employed, a surface glossiness of a silicon single-crystal thin film formed on the front main surface of the chemically etched substrate can be increased to 95% or higher, thereby, enabling an auto-alignment treatment in a lithographic step coming later with no trouble.

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First Claim