System for manufacturing a single-crystal ingot employing czochralski technique, and method of controlling the system
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United States of America Patent
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Oct 1, 2002
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N/A
app pub date -
Apr 27, 2000
filing date -
Apr 28, 1999
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Abstract
There are provided a CZ system for manufacturing a single-crystal ingot, which produces a perfect crystal with good reproducibility through growth of a single-crystal ingot, as well as a method of manufacturing the single-crystal ingot. A system of manufacturing a single-crystal ingot by pulling a single-crystal ingot from molten raw material by means of a Czochralski technique, the system including measurement means for measuring the distance between the level of molten raw material and the bottom of a heat-shielding member. On the basis of the thus-measured distance, the temperature gradient of area G1 of the single-crystal pulled silicon ingot is controlled so as to produce a perfect crystal with good reproducibility, by means of controlling any factor for pulling a single-crystal silicon ingot selected from the group comprising the amount of heat applied to silicon melt, the level of silicon melt, and the pull rate of a single-crystal silicon ingot.
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