Crystallization apparatus and method using non-vacuum process
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United States of America Patent
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Oct 1, 2002
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May 26, 2000
filing date -
May 28, 1999
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Abstract
A crystallization apparatus and method that is adapted to crystallize a semiconductor using a non-vacuum process. In the apparatus and method, laser beams are irradiated onto a substrate to grow a crystal unilaterally from the side surface of the substrate. Grain boundaries are minimized under the air atmosphere, so that a crystallization of the substrate can be made in a non-vacuum state to improve the throughput.
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