High-frequency semiconductor laser module
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United States of America Patent
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Sep 24, 2002
Grant Date -
N/A
app pub date -
Oct 27, 1999
filing date -
May 12, 1997
priority date (Note) -
Expired
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Abstract
The invention is directed to a high-frequency semiconductor laser module with a silicon substrate, especially made of low-impedance silicon, a laser diode arranged thereon, and at least two lines for the H-F feed, one of which is insulated from the silicon substrate by a dielectric layer. According to the invention, the laser diode is arranged on the silicon substrate via a metallic mounting layer, and the H-F line is guided close to the laser diode on the dielectric layer.
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