Magnetic impedance element having a highly linear magnetic field detection range
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United States of America Patent
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Sep 24, 2002
Grant Date -
N/A
app pub date -
Oct 16, 2000
filing date -
Oct 22, 1999
priority date (Note) -
Expired
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Abstract
In a magnetic impedance element in which an element body is formed of a magnetic thin film formed on a non-magnetic substrate, and when a high-frequency current is supplied to the magnetic thin film, an impedance between both ends of the magnetic thin film changes in accordance with an external magnetic field, the magnetic thin film is formed in a slender zigzag pattern obtained by folding a straight line in parallel several times, and an easy axis of magnetization of the magnetic thin film is so set as to be directed along the longitudinal direction of the pattern. Also, assuming that a thickness of the magnetic thin film is T, a line width of the pattern is W, and a length of the pattern is L, T is in a range of 1 to 5 .mu.m, and L/(W.times.T) is in a range of 10 to 400.times.10.sup.6 m.sup.-1.
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