Active photodiode CMOS image sensor structure
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United States of America Patent
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Sep 10, 2002
Grant Date -
N/A
app pub date -
Jun 26, 2000
filing date -
Jun 26, 2000
priority date (Note) -
Expired
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Abstract
An active photodiode CMOS image sensor comprising a light-sensitive photodiode region, a transistor and a cover layer. The light-sensitive region is formed in a substrate body and the transistor is formed above the substrate body. The source region of the transistor is connected to the light-sensitive region. The cover layer is formed above the light-sensitive photodiode region using a method similar to method used to form the gate dielectric layer.
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