Method and apparatus for etching silicon
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United States of America Patent
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Sep 3, 2002
Grant Date -
N/A
app pub date -
Jul 13, 2000
filing date -
Jul 14, 1999
priority date (Note) -
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Abstract
An etching method and an etching apparatus for applying an etchant containing nitric acid and hydrofluoric acid to silicon to etch the silicon. The etchant used in etching is recovered, and brought into contact with a gas inert to the etchant, whereby the etchant is regenerated. At least a part of the regenerated etchant is reused in etching.
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