Composite semiconductor devices and method for manufacture thereof
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United States of America Patent
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Sep 3, 2002
Issued Date -
N/A
app pub date -
Apr 11, 2000
filing date -
Jun 25, 1993
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An integrated semiconductor device is formed from two fabricated semiconductor devices each having a substrate by placing an etch-resist on the substrate of the one semiconductor device, by bonding the conductors of one of the fabricated semiconductor devices to the conductors of the other fabricated semiconductor device, flowing an uncured cement (e.g. epoxy) between the etch-resist and the other substrate, allowing the cement to solidify, and removing the substrate from the one of the semiconductor devices. More specifically, a hybrid semiconductor device is formed from a GaAs/AlGaAs multiple quantum well modulator having a substrate and an IC chip having a substrate by placing an etch resist on the modulator substrate, bonding the conductors of the modulator to the conductors of the chip, wicking an uncured epoxy between the modulators and the chip, allowing the epoxy to cure, and removing the substrate from the modulator.
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