Article comprising a dielectric material of ZR-Ge-Ti-O or Hf-Ge-Ti-O and method of making the same
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United States of America Patent
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Aug 20, 2002
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N/A
app pub date -
Dec 8, 1999
filing date -
Dec 8, 1999
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Abstract
The invention relates to dielectric materials comprising films of R--Ge--Ti--O where R is selected from Zr and Hf, and to methods of making the same. The dielectric material preferably has the formula R.sub.x --Ge.sub.y --Ti.sub.z --O.sub.w where 0.05.gtoreq.x.ltoreq.1, 0.05.gtoreq.y.ltoreq.1, 0.1.gtoreq.z.ltoreq.1, and 1.gtoreq.w.ltoreq.2, and x+y+z.congruent.1, and more preferably, where 0.15.gtoreq.x.ltoreq.0.7, 0.05.gtoreq.y.ltoreq.0.3, 0.25.gtoreq.z.ltoreq.0.7, and 1.95.gtoreq.w.ltoreq.2.05, and x+y+z.congruent.1. The invention is particularly useful in silicon-chip integrated circuit devices including a capacitor of a dynamic random access memory (DRAM) device.
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