Method for preparing transparent conductive thin film by rapid thermal annealing method
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United States of America Patent
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Aug 20, 2002
Grant Date -
Jun 13, 2002
app pub date -
May 19, 2000
filing date -
Dec 28, 1999
priority date (Note) -
Expired
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Abstract
The present invention relates to a transparent conductive thin film and a method for the preparation of the same., and more particularly to a method for the preparation of a transparent conductive thin film comprising the steps of a) preparing a sol solution of antimony-tin oxides (ATO) or indium-tin oxides (ITO), b) forming a transparent coating layer on an outer surface of a cathode ray tube using the sol solution, and c) rapidly increasing a temperature of the transparent coating layer to a predetermined temperature of 300 to 1200.degree. C., and rapidly cooling the transparent coating layer either immediately or after maintaining the predetermined temperature for up to 20 seconds, and a transparent conductive thin film prepared by this preparation method, i.e., a transparent conductive thin film which not only has superior conductivity, high hardness, and non-reflectivity but also saves production process time and increases production process effectiveness, and a method for the preparation of the same.
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