Formation of thin film capacitors

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United States of America Patent

PATENT NO 6433993
SERIAL NO

09283100

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Abstract

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Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

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Patent Owner(s)

Patent OwnerAddress
MORTON INTERNATIONAL INC100 NORTH RIVERSIDE PLAZA RANDOLPH STREET AT THE RIVER CHICAGO ILLINOIS 60606

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Hendrick, Michelle Winder, GA 5 182
Hornis, Helmut G Hudson, OH 9 365
Hunt, Andrew T Atlanta, GA 42 1119
Hwang, Tzyy Jiuan Alpharetta, GA 9 353
Lin, Wen-Yi Doraville, GA 81 1412

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