Vortex based CVD reactor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 6, 2002
Grant Date -
N/A
app pub date -
Oct 16, 2000
filing date -
Oct 16, 2000
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
Chemical vapor deposition reactor incorporating gas flow vortex formation for uniform chemical vapor deposition upon a stationary wafer substrate. Gas flow including chemical vapors is introduced in tangential fashion to the interior of the heated reactor to provide for suitable uniform boundary layer control within the reactor upon the stationary wafer substrate.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully