COPPER-BASED METAL POLISHING COMPOSITION, METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE, POLISHING COMPOSITION, ALUMINUM-BASED METAL POLISHING COMPOSITION, AND TUNGSTEN-BASED METAL POLISHING COMPOSITION
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United States of America Patent
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Jul 30, 2002
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N/A
app pub date -
Oct 1, 1999
filing date -
Oct 7, 1998
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Abstract
The copper-based metal polishing composition causes Cu or Cu alloy not to be dissolved at all in immersing Cu or Cu alloy therein, and makes it possible to polish Cu or Cu alloy at a high rate in polishing treatment. Such a copper-based metal polishing composition comprises a water-soluble first organic acid capable of reaction with copper to produce a copper complex compound which is substantially insoluble in water and has a mechanical strength lower than that of copper, at least one second organic acid selected from an organic acid having a single carboxyl group and a single hydroxyl group and oxalic acid, an abrasive grain, an oxidizing agent, and water.
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