Method for scribing a semiconductor device
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United States of America Patent
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Jul 23, 2002
Grant Date -
N/A
app pub date -
Apr 19, 2001
filing date -
Apr 19, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
There is disclosed herein a method for scribing the top electrode of semiconductor devices. According to the method, a scribe region of the top electrode is defined by creating a high electrical resistance perimeter there around. A channel having relatively high electrical conductivity is formed between the scribe region of the top electrode and the bottom electrode of the device. The device is then subjected to an electroconversion process wherein a current flow via the conductive path, and through the scribe region of the electrode, causes the bath to render the top electrode material in the scribe area nonconductive.
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