Semiconductor lasers and amplifiers with grating-induced anisotropic waveguide
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United States of America Patent
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Jul 16, 2002
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N/A
app pub date -
Mar 16, 1999
filing date -
Mar 17, 1998
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Expired
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Abstract
The present invention provides a coherent light-generating semiconductor structure comprising: at least one active region including a pumped portion for achieving optical gain; a first optical waveguide for confining light waves in the transverse direction and for propagating light waves along the optical axis of said first optical waveguide; first and second reflective means, the first and second reflective means being spaced apart from one another and defining a resonant optical cavity therebetween, the pumped portion of the at least one active region being located at least partially within the resonant optical cavity, and the resonant optical cavity encompassing at least a portion of the optical waveguide; the active region, the optical waveguide, and the resonant optical cavity having properties necessary to establish and maintain a principal optical mode; a grating located in at least a portion of the resonant optical cavity, the grating having grating teeth oriented at an angle relative to the first and second reflective means, such that substantially all excited light waves which are incident on the first and second reflective means are out of the Bragg resonance bandwidth of the grating. The present invention also provides a method for reducing filamentation in a high-power laser or amplifier.
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