Method for forming an integrated barrier/plug for a stacked capacitor

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United States of America Patent

PATENT NO 6420267
SERIAL NO

09551757

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Abstract

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A method of forming an integrated barrier/contact for stacked capacitors is provided which results in reduced cost of ownership and in a barrier which is nominally several times thicker than convention structures. The resulting structure results in decreased contact plug resistance as compared with conventional devices.

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Patent Owner(s)

Patent OwnerAddress
INFINEON TECHNOLOGIES AGGERMAN LAURA KAN ANG 1-12 PYRENE EBY BERG CITY NO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Knorr, Andreas Fishkill, NY 205 2708
Lian, Jenny Walkkill, NY 20 151
Lin, Chenting Poughkeepsie, NY 17 132
Schutz, Ronald J Millbrook, NY 16 185
Shen, Hua San Francisco, CA 25 345
Wong, Keith Wappingers Falls, NY 14 71

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