Methods for fabricating light emitting devices having aluminum gallium indium nitride structures and mirror stacks
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United States of America Patent
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Jul 16, 2002
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N/A
app pub date -
Aug 6, 2001
filing date -
Feb 5, 1999
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Abstract
Light emitting devices having a vertical optical path, e.g. a vertical cavity surface emitting laser or a resonant cavity light emitting or detecting device, having high quality mirrors may be achieved using wafer bonding or metallic soldering techniques. The light emitting region interposes one or two reflector stacks containing dielectric distributed Bragg reflectors (DBRs). The dielectric DBRs may be deposited or attached to the light emitting device. A host substrate of GaP, GaAs, InP, or Si is attached to one of the dielectric DBRs. Electrical contacts are added to the light emitting device.
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