High speed semiconductor photodetector
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United States of America Patent
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Jul 9, 2002
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N/A
app pub date -
Jan 28, 2000
filing date -
Jan 28, 2000
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Abstract
The invention is a semiconductor avalanche photodetector including an essentially undoped multiplication layer; a thin, undoped light absorbing layer; and a doped waveguide layer which is separate from the light absorbing layer and is capable of coupling incident light into the light absorbing layer.
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