Method for substrate thermal management
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United States of America Patent
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Jul 2, 2002
Grant Date -
N/A
app pub date -
Mar 7, 2000
filing date -
Mar 7, 2000
priority date (Note) -
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Abstract
This invention is a thermal management method for efficient, rapid, controllable and uniform thermal management over a wide temperature range. The method integrates a thermal source, thermal sink and a thermal diffuser. According to the invention, a thermal diffuser is positioned stationary relative to the wafer surface and coupled to a thermal source and a thermal sink, which are also stationary relative to the wafer surface. The thermal sink comprises a heat-carrying media with a controllable temperature. The wafer is heated from a first processing temperature to a second processing temperature during a heating time interval and then cooled to the first processing temperature from the second processing temperature during a cooling time interval. During heating and cooling, the wafer is constantly held in a fixed position. Zonal control of the thermal source and non-uniform flow of the thermal sink enable sensitive mitigation of thermal non-uniformity on a heating surface.
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