Method for producing dielectric porcelain composition for electronic device
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United States of America Patent
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Jul 2, 2002
Grant Date -
N/A
app pub date -
Dec 6, 2000
filing date -
Jun 22, 1998
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for producing X(Ba.sub.Z.Sr.sub.1-Z)(Zn.sub.1/3.(Ta.sub.M.Nb.sub.1-M).sub.2/3)O.sub.3 --Y(Ba.sub.Z'.Sr.sub.1-Z')(Ga.sub.1/2.Ta.sub.1/2)O.sub.3 solid solution system, characterized in that sintering is carried out at a temperature of 1400.degree. C. to 1550.degree. C. in an atmosphere of N.sub.2 containing oxygen in a concentration of 6% to 40% or sintering is carried out at a temperature of 1400.degree. C. to 1550.degree. C. after presintering at a temperature of 900.degree. C. to 1300.degree. C. This method is suitably used in order to constantly produce a dielectric porcelain composition for an electronic device which has a reduced temperature coefficient of resonance frequency and an excellent specific dielectric constant, and is uniform with respect to the quality distribution in one composition, by suppressing the evaporation of the Zn contained in a conventional porcelain composition of a perovskite type compound and adjusting the oxygen concentration in an atmosphere for sintering to a specific value without controlling a composition.
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