Finfet transistor structures having a double gate channel extending vertically from a substrate and methods of manufacture
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United States of America Patent
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Jul 2, 2002
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N/A
app pub date -
Oct 23, 2000
filing date -
Oct 23, 2000
priority date (Note) -
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Abstract
A FinFET device is fabricated using conventional planar MOSFET technology. The device is fabricated in a silicon layer overlying an insulating layer (e.g., SIMOX) with the device extending from the insulating layer as a fin. Double gates are provided over the sides of the channel to provide enhanced drive current and effectively suppress short channel effects. A plurality of channels can be provided between a source and a drain for increased current capacity. In one embodiment two transistors can be stacked in a fin to provide a CMOS transistor pair having a shared gate.
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