GaN single crystal substrate and method of producing same
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United States of America Patent
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Jul 2, 2002
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N/A
app pub date -
Jun 15, 1999
filing date -
Jun 18, 1998
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Abstract
A freestanding GaN single crystal substrate is made by the steps of preparing a (111) GaAs single crystal substrate, forming a mask having periodically arranged windows on the (111) GaAs substrate, making thin GaN buffer layers on the GaAs substrate in the windows of the mask, growing a GaN epitaxial layer on the buffer layers and the mask by an HVPE or an MOC, eliminating the GaAs substrate and the mask away and obtaining a freestanding GaN single crystal substrate. The GaN single crystal has a diameter larger than 20 mm and a thickness more than 0.07 mm, being freestanding and substantially distortion-free.
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