SEMICONDUCTOR INTEGRATED SWITCHING CIRCUIT

Number of patents in Portfolio can not be more than 2000

United States of America Patent

APP PUB NO 20020075059A1
SERIAL NO

09819761

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The semiconductor integrated switching circuit S1 employed in a dual-band mobile phone comprises the first through fourth field effect transistor 1, 2, 3, 4 by which electrical connection between either of the first through fourth input/output terminal 22 through 25 and the common input-output terminal 21 are controlled, the fifth field effect transistor 5 which becomes conducting with the second field effect transistor 2, and the series resonance circuit 51 having a resonance frequency equals to a frequency of higher harmonic of the signal passing through the second field effect transistor 2. The fifth field effect transistor 5 and the series resonance circuit 51 are connected in series and attached between the common input-output terminal 21 and the ground so as to divert the higher harmonic of the signal without giving passing loss to the signal.

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Patent Owner(s)

Patent OwnerAddress
NEW JAPAN RADIO CO LTD3-10 YOKOYAMA-CHO NIHONBASHI CHUO-KU TOKYO-TO

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Takahashi, Masaru Kamifukuoka-shi, JP 255 1818

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  • 2.60 % this patent is cited more than
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Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges21424200842615159331701 - 1011 - 2021 - 3031 - 4041 - 5051 - 6061 - 7071 - 8081 - 9091 - 100100 +0255075100125150175200225250275300325350375400425450

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