Fabrication of high power semiconductor lasers with ridge waveguide structure
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United States of America Patent
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Jun 18, 2002
Grant Date -
Sep 13, 2001
app pub date -
Apr 12, 2001
filing date -
Sep 29, 1997
priority date (Note) -
Expired
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Abstract
A 0.98 .mu.m semiconductor laser of a ridge waveguide (RWG) structure includes: to be lengthen the durability of a semiconductor laser by increasing a catastrophic optical damage (COD) level, a ridge having a fixed width and length so that the strip may stop in the position of 30 .mu.m on the basic of end portion of an output facet along length direction of a resonator; and a non-waveguide region in the end portion of both sides of a resonator.
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