Methods of fabricating a memory device
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United States of America Patent
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Jun 11, 2002
Grant Date -
N/A
app pub date -
Aug 31, 2000
filing date -
Aug 31, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Various methods of fabricating circuit devices are provided. In one aspect, a method of fabricating a circuit device on a substrate is provided. The method includes forming a doped silicon structure on the substrate and forming a hemispherical grain silicon film on the silicon structure. The substrate is heated from a first temperature to a second temperature while undergoing exposure to a dopant gas to add a dopant to the hemispherical grain silicon film. The method provides for improved capacitor electrode fabrication via concurrent gas exposure and substrate temperature ramp-up. In this way, dopant gas is introduced before the doped silicon structure transitions from an amorphous state to a polycrystalline state.
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