Method for making hyperfrequency transistor
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United States of America Patent
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Jun 11, 2002
Grant Date -
N/A
app pub date -
Dec 29, 1999
filing date -
Jun 11, 1997
priority date (Note) -
Expired
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Abstract
A bipolar transistor including an extrinsic base on the surface of a silicon substrate covered by a first layer of doped polycrystalline silicon, an intrinsic base that is separated from the extrinsic base and covered by a second layer of polycrystalline silicon that constitutes the emitter and that is insulated from the first layer of polycrystalline silicon, and a link base that links the extrinsic base to the intrinsic base. The link base is located under the first layer of doped polycrystalline silicon.
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