Semiconductor memory device capable of high speed input/output of wide bandwidth data by improving usage efficiency of external data bus

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United States of America Patent

PATENT NO 6396747
APP PUB NO 20010036116A1
SERIAL NO

09461093

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Abstract

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Serial write data of the burst length transmitted to a data bus are stored in parallel in latch circuits by a S/P data conversion circuit. In a memory cell array, one row of memory cells and four columns of memory cells are rendered active at the same time. Respective bit lines and latch circuits are connected by a sense amplifier I/O circuit. The write data of the burst length are written into the memory cell array at one time. The data of the bit length read out at one time from the memory cell array are converted into serial data by a P/S data conversion circuit to be transmitted to the data bus.

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Patent Owner(s)

Patent OwnerAddress
DRAM MEMORY TECHNOLOGIES LLC500 NEWPORT CENTER DRIVE NEWPORT BEACH CA 92660

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Iwamoto, Hisashi Hyogo, JP 56 2264
Kubo, Takashi Hyogo, JP 267 2077

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