Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity
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United States of America Patent
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May 28, 2002
Grant Date -
N/A
app pub date -
Jun 26, 2000
filing date -
Jul 7, 1999
priority date (Note) -
Expired
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Abstract
Optical semiconductor device with resonant cavity tunable in wavelength, application to modulation of light intensity. This device comprises a resonant cavity (2) delimited by two mirrors (4, 6) and at least one super-lattice (14) that is placed in the cavity and is formed from piezoelectric semiconducting layers, and means (20) of injecting charge carriers into the super-lattice. The optical properties of this super-lattice can thus be modified and the wavelength of cavity resonance modes can be offset. The invention is particularly applicable to optical telecommunications.
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