Microwave switch and method of operation thereof
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United States of America Patent
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May 21, 2002
Grant Date -
N/A
app pub date -
Nov 12, 1998
filing date -
Nov 12, 1997
priority date (Note) -
Expired
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Abstract
An HTS microwave circuit has two layers formed with metallic film on a substrate. One layer has a first circuit and another layer has a second circuit, the two circuits being coupled to one another. The second circuit has elements that are incompatible with HTS material such as MEMS technology and flip-chip technology. A microwave switch has a first layer that can carry an RF signal and a second layer that has switch elements that are controlled by a DC. signal. The RF signal and DC signal are isolated from one another. The switch elements include various technologies including a narrow HTS strip. A single layer HTS microwave switch can also be utilized where the switch element is a narrow HTS line. A method of combing HTS technology with incompatible technologies into one device is provided.
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