Plasma processing method

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United States of America Patent

PATENT NO 6392350
SERIAL NO

09656214

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Abstract

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There is provided a method capable of shortening a preheat time when a thin film is deposited after a preheat is carried out. The current values of a main electromagnetic coil and an auxiliary electromagnetic coil during a preheat and during a thin-film deposition are set to be different from each other to change the shape of an obtained magnetic field so that the magnetic field has a small magnetic flux density although it has higher uniformity during the thin-film deposition, whereas the magnetic field has a large magnetic flux density although it has lower uniformity during the preheat. As a result, a substantially uniform plasma is produced in the plane of a wafer during the thin-film deposition, so that it is possible to carry out a uniform thin-film deposition. On the other hand, during the preheat, a plasma having a larger density than that during the thin-film deposition is produced although the uniformity thereof is lower. Therefore, the heat gain into the wafer is greater than that during the thin-film deposition, so that it is possible to shorten the preheat time.

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Patent Owner(s)

Patent OwnerAddress
TOKYO ELECTRON LIMITEDTOKYO JAPAN

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Amano, Hideaki Zama, JP 41 1058

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